IPP50N10S3L16AKSA1
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionN-CHANNEL AUTOMOTIVE MOSFET
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPP50N10S3L16AKSA1 Datasheet
-
ECAD Model
- Share
In Stock: 81,490
Can ship immediately
Pricing:
- 1$0.75
- 10$0.67849
- 100$0.54523
- 500$0.42406
- 1,000$0.35136
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Technical Details
- Series:OptiMOS™
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:15.7mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:2.4V @ 60µA
- Gate Charge (Qg) (Max) @ Vgs:64 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:4.18 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):100W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:PG-TO220-3-1
- Package / Case:TO-220-3
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