CSD16407Q5C

Rochester Electronics
In Stock: 9,805

Can ship immediately

Pricing:
  • 1$0.8
  • 2,500$0.8

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Technical Details

  • Series:NexFET™
  • Package:Bulk
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):25 V
  • Current - Continuous Drain (Id) @ 25°C:31A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:2.4mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id:1.9V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:18 nC @ 4.5 V
  • Vgs (Max):+16V, -12V
  • Input Capacitance (Ciss) (Max) @ Vds:2.66 pF @ 12.5 V
  • FET Feature:-
  • Power Dissipation (Max):3.1W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-VSON-CLIP (5x6)
  • Package / Case:8-PowerTDFN

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