AUIRFN8401TR
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionAUTOMOTIVE HEXFET POWER MOSFET
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet AUIRFN8401TR Datasheet
-
ECAD Model
- Share
In Stock: 32,154
Can ship immediately
Pricing:
- 1$0.82
- 4,000$0.82
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Technical Details
- Series:HEXFET®
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):40 V
- Current - Continuous Drain (Id) @ 25°C:84A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:4.6mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:3.9V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs:66 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:2.17 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):4.2W (Ta), 63W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PQFN (5x6)
- Package / Case:8-PowerTDFN
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