BSC010NE2LSIATMA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 25V 38A/100A TDSON
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet BSC010NE2LSIATMA1 Datasheet
-
ECAD Model
- Share
In Stock: 18,683
Can ship immediately
Pricing:
- 1$1.82
- 5,000$0.89267
- 10,000$0.87393
Quote It
Technical Details
- Series:OptiMOS™
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):25 V
- Current - Continuous Drain (Id) @ 25°C:38A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:1.05mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:59 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:4200 pF @ 12 V
- FET Feature:-
- Power Dissipation (Max):2.5W (Ta), 96W (Tc)
- Operating Temperature:-
- Mounting Type:Surface Mount
- Supplier Device Package:PG-TDSON-8-7
- Package / Case:8-PowerTDFN
Related Products
MOSFET N-CH 700V 12A TO252
- 1: $1.92000
N-CHANNEL POWER MOSFET
- 1: $0.89000
MOSFET N-CH 60V 55A TO220AB
- 1: $0.89000
N-CHANNEL POWER MOSFET
- 1: $0.89000