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Technical Details

  • Series:U-MOSIX-H
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:120A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):6V, 10V
  • Rds On (Max) @ Id, Vgs:1.9mOhm @ 60A, 6V
  • Vgs(th) (Max) @ Id:3V @ 500µA

 

  • Gate Charge (Qg) (Max) @ Vgs:103 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:5500 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):180W (Tc)
  • Operating Temperature:175°C
  • Mounting Type:Surface Mount
  • Supplier Device Package:DPAK+
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63

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