IPI90R800C3XKSA1
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 900V 6.9A TO262-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPI90R800C3XKSA1 Datasheet
-
ECAD Model
- Share
In Stock: 16,603
Can ship immediately
Pricing:
- 1$0.96
- 500$0.96
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Technical Details
- Series:CoolMOS™
- Package:Tube
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):900 V
- Current - Continuous Drain (Id) @ 25°C:6.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:800mOhm @ 4.1A, 10V
- Vgs(th) (Max) @ Id:3.5V @ 460µA
- Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1.1 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):104W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:PG-TO262-3
- Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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