TPW1R104PB,L1XHQ

Technical Details

• Series:U-MOSIX-H
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):40 V
• Current - Continuous Drain (Id) @ 25°C:120A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):6V, 10V
• Rds On (Max) @ Id, Vgs:1.14mOhm @ 60A, 10V
• Vgs(th) (Max) @ Id:3V @ 500µA

• Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:4560 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):960mW (Ta), 132W (Tc)
• Operating Temperature:175°C
• Mounting Type:Surface Mount
• Supplier Device Package:8-DSOP Advance
• Package / Case:8-PowerVDFN