XPW4R10ANB,L1XHQ

Technical Details

• Series:Automotive, AEC-Q101
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):100 V
• Current - Continuous Drain (Id) @ 25°C:70A
• Drive Voltage (Max Rds On, Min Rds On):6V, 10V
• Rds On (Max) @ Id, Vgs:4.1mOhm @ 35A, 10V
• Vgs(th) (Max) @ Id:3.5V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:75 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:4970 pF @ 10 V
• FET Feature:Standard
• Power Dissipation (Max):170W (Tc)
• Operating Temperature:-55°C ~ 175°C
• Mounting Type:Surface Mount
• Supplier Device Package:8-DSOP Advance
• Package / Case:8-PowerVDFN