IRF830
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 500V 4.5A TO220-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRF830 Datasheet
-
ECAD Model
- Share
In Stock: 648
Can ship immediately
Pricing:
- 1$1.34
- 2,000$0.4466
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):500 V
- Current - Continuous Drain (Id) @ 25°C:4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):-
- Rds On (Max) @ Id, Vgs:1.5Ohm @ 2.5A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:600 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):75W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220-3
- Package / Case:TO-220-3
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