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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:22A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:3mOhm @ 21A, 10V
  • Vgs(th) (Max) @ Id:3V @ 1mA

 

  • Gate Charge (Qg) (Max) @ Vgs:66 nC @ 10 V
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:4.225 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):2.5W (Ta), 65W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-PQFN (5x6)
  • Package / Case:8-PowerTDFN

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