NP80N04PDG-E1B-AY

Rochester Electronics
In Stock: 1,150

Can ship immediately

Pricing:
  • 1$1.62

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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:4.5mOhm @ 40A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:135 nC @ 10 V
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:6.9 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):1.8W (Ta), 115W (Tc)
  • Operating Temperature:175°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-263-3
  • Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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