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Technical Details

  • Series:HEXFET®
  • Package:Tube
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.3V, 10V
  • Rds On (Max) @ Id, Vgs:4mOhm @ 95A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:140 nC @ 5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:6.6 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):3.8W (Ta), 200W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:D-PAK (TO-252AA)
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63

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