FDS2170N3
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 200V 3A 8SOIC
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet FDS2170N3 Datasheet
-
ECAD Model
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In Stock: 2,754
Can ship immediately
Pricing:
- 1$1.91
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Technical Details
- Series:PowerTrench®
- Package:Bulk
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):200 V
- Current - Continuous Drain (Id) @ 25°C:3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:128mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id:4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1.292 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):3W (Ta)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:8-SOIC
- Package / Case:8-SOIC (0.154", 3.90mm Width)
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