RJK4006DPD-00#J2
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionPOWER FIELD-EFFECT TRANSISTOR
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet RJK4006DPD-00#J2 Datasheet
-
ECAD Model
- Share
In Stock: 33,140
Can ship immediately
Pricing:
- 1$2.22
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):400 V
- Current - Continuous Drain (Id) @ 25°C:8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:800mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id:-
- Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:620 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):65W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:MP-3A
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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