IRFS4310TRRPBF
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 100V 130A TO263-3-2
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRFS4310TRRPBF Datasheet
-
ECAD Model
- Share
In Stock: 1,604
Can ship immediately
Pricing:
- 1$2.43
- 800$2.43
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Technical Details
- Series:HEXFET®
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):-
- Rds On (Max) @ Id, Vgs:7mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:250 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:7670 pF @ 50 V
- FET Feature:-
- Power Dissipation (Max):300W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-TO263-3-2
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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