IPI65R099C6XKSA1

Technical Details

• Series:CoolMOS™
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):650 V
• Current - Continuous Drain (Id) @ 25°C:38A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:99mOhm @ 12.8A, 10V
• Vgs(th) (Max) @ Id:3.5V @ 1.2mA

• Gate Charge (Qg) (Max) @ Vgs:127 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:2.78 pF @ 100 V
• FET Feature:-
• Power Dissipation (Max):278W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:PG-TO262-3-1
• Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA