STI33N65M2

STMicroelectronics
In Stock: 2,172

Can ship immediately

Pricing:
  • 1$3.44
  • 50$2.8099
  • 100$2.57785
  • 500$2.12554
  • 1,000$1.82401
  • 2,500$1.74282
  • 5,000$1.68483

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Technical Details

  • Series:MDmesh™ M2
  • Package:Tube
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):650 V
  • Current - Continuous Drain (Id) @ 25°C:24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:140mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:41.5 nC @ 10 V
  • Vgs (Max):±25V
  • Input Capacitance (Ciss) (Max) @ Vds:1790 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):190W (Tc)
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:I2PAK
  • Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA

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