IPI60R099CPAAKSA1
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionPFET, 31A I(D), 600V, 0.105OHM,
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPI60R099CPAAKSA1 Datasheet
-
ECAD Model
- Share
In Stock: 17,446
Can ship immediately
Pricing:
- 1$3.73
- 500$3.73
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Technical Details
- Series:CoolMOS™
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:105mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id:3.5V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:2.8 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):255W (Tc)
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:PG-TO262-3
- Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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