IRFPS3810PBF

Rochester Electronics
In Stock: 1,057

Can ship immediately

Pricing:
  • 1$4.8
  • 10$4.32047
  • 100$3.55224
  • 500$2.97618
  • 1,000$2.59216

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Technical Details

  • Series:HEXFET®
  • Package:Bulk
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:170A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:9mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id:5V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:390 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:6790 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):580W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:SUPER-247
  • Package / Case:TO-274AA

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