G3R160MT12D
GeneSiC Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionSIC MOSFET N-CH 22A TO247-3
- CategoryTransistors - FETs, MOSFETs - Single
-
ECAD Model
- Share
In Stock: 730
Can ship immediately
Pricing:
- 1$6.72
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Technical Details
- Series:G3R™
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss):1200 V
- Current - Continuous Drain (Id) @ 25°C:22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):15V
- Rds On (Max) @ Id, Vgs:192mOhm @ 10A, 15V
- Vgs(th) (Max) @ Id:2.69V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs:28 nC @ 15 V
- Vgs (Max):±15V
- Input Capacitance (Ciss) (Max) @ Vds:730 pF @ 800 V
- FET Feature:-
- Power Dissipation (Max):123W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-247-3
- Package / Case:TO-247-3
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