C2M0160120D
Wolfspeed - a Cree company
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionSICFET N-CH 1200V 19A TO247-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet C2M0160120D Datasheet
-
ECAD Model
- Share
In Stock: 707
Can ship immediately
Pricing:
- 1$7.81
Quote It
Technical Details
- Series:Z-FET™
- Package:Tube
- Part Status:Not For New Designs
- FET Type:N-Channel
- Technology:SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss):1200 V
- Current - Continuous Drain (Id) @ 25°C:19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):20V
- Rds On (Max) @ Id, Vgs:196mOhm @ 10A, 20V
- Vgs(th) (Max) @ Id:2.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs:32.6 nC @ 20 V
- Vgs (Max):+25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds:527 pF @ 800 V
- FET Feature:-
- Power Dissipation (Max):125W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-247-3
- Package / Case:TO-247-3
Related Products
MOSFET N-CH 150V 100A TO220
- 1: $7.87000
MOSFET N-CH 200V 21.3A TO3PML
- 1: $7.93000
POWER N AND P CHANNEL MOSFETS
- 1: $7.94000
SIC MOSFET N-CH 9A TO263-7
- 1: $7.97000
N-CHANNEL POWER MOSFET
- 1: $8.00000