R6030JNZ4C13

Technical Details

• Series:-
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):600 V
• Current - Continuous Drain (Id) @ 25°C:30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):15V
• Rds On (Max) @ Id, Vgs:143mOhm @ 15A, 15V
• Vgs(th) (Max) @ Id:7V @ 5.5mA

• Gate Charge (Qg) (Max) @ Vgs:74 nC @ 15 V
• Vgs (Max):±30V
• Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 100 V
• FET Feature:-
• Power Dissipation (Max):370W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-247G
• Package / Case:TO-247-3