SCTW35N65G2VAG
STMicroelectronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionSICFET N-CH 650V 45A HIP247
- CategoryTransistors - FETs, MOSFETs - Single
-
ECAD Model
- Share
In Stock: 646
Can ship immediately
Pricing:
- 1$14.67
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Technical Details
- Series:Automotive, AEC-Q101
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss):650 V
- Current - Continuous Drain (Id) @ 25°C:45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):18V, 20V
- Rds On (Max) @ Id, Vgs:67mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id:5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:73 nC @ 20 V
- Vgs (Max):+22V, -10V
- Input Capacitance (Ciss) (Max) @ Vds:1370 pF @ 400 V
- FET Feature:-
- Power Dissipation (Max):240W (Tc)
- Operating Temperature:-55°C ~ 200°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:HiP247™
- Package / Case:TO-247-3
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