TSM080N03EPQ56 RLG
TSC (Taiwan Semiconductor)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 30V 55A 8PDFN
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TSM080N03EPQ56 RLG Datasheet
-
ECAD Model
- Share
In Stock: 2,676
Can ship immediately
Pricing:
- 1$0.72
- 2,500$0.20444
- 5,000$0.19126
- 12,500$0.18466
Quote It
Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:8mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id:2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:7.5 nC @ 4.5 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:750 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):54W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:8-PDFN (5x6)
- Package / Case:8-PowerTDFN
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