NXV55UNR

Technical Details

• Series:TrenchMOS™
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:1.9A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
• Rds On (Max) @ Id, Vgs:66mOhm @ 1.9A, 4.5V
• Vgs(th) (Max) @ Id:900mV @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:8.7 nC @ 4.5 V
• Vgs (Max):±8V
• Input Capacitance (Ciss) (Max) @ Vds:352 pF @ 15 V
• FET Feature:-
• Power Dissipation (Max):340mW (Ta), 2.1W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:TO-236AB
• Package / Case:TO-236-3, SC-59, SOT-23-3