XP231N02013R-G

Technical Details

• Series:-
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
• Rds On (Max) @ Id, Vgs:5Ohm @ 10mA, 4.5V
• Vgs(th) (Max) @ Id:1.8V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:180 pC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:6.5 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):350mW (Ta)
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:SOT-323-3
• Package / Case:SC-70, SOT-323