RUM002N02T2L

ROHM Semiconductor
In Stock: 187

Can ship immediately

Pricing:
  • 1$0.4
  • 8,000$0.056
  • 16,000$0.0476
  • 24,000$0.0448
  • 56,000$0.042
  • 200,000$0.0392

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Technical Details

  • Series:-
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.2V, 2.5V
  • Rds On (Max) @ Id, Vgs:1.2Ohm @ 200mA, 2.5V
  • Vgs(th) (Max) @ Id:1V @ 1mA

 

  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±8V
  • Input Capacitance (Ciss) (Max) @ Vds:25 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):150mW (Ta)
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:VMT3
  • Package / Case:SOT-723

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