SSM6J214FE(TE85L,F

Technical Details

• Series:U-MOSVI
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:3.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):1.8V, 10V
• Rds On (Max) @ Id, Vgs:50mOhm @ 3A, 10V
• Vgs(th) (Max) @ Id:1.2V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:7.9 nC @ 4.5 V
• Vgs (Max):±12V
• Input Capacitance (Ciss) (Max) @ Vds:560 pF @ 15 V
• FET Feature:-
• Power Dissipation (Max):500mW (Ta)
• Operating Temperature:150°C
• Mounting Type:Surface Mount
• Supplier Device Package:ES6
• Package / Case:SOT-563, SOT-666