RW1C025ZPT2CR

ROHM Semiconductor
In Stock: 5,181

Can ship immediately

Pricing:
  • 1$0.45
  • 8,000$0.11355
  • 16,000$0.10622
  • 24,000$0.10256

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Technical Details

  • Series:-
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Not For New Designs
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs:65mOhm @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 1mA

 

  • Gate Charge (Qg) (Max) @ Vgs:21 nC @ 4.5 V
  • Vgs (Max):±10V
  • Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):700mW (Ta)
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:6-WEMT
  • Package / Case:SOT-563, SOT-666

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