SI3443DDV-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 20V 4A/5.3A 6TSOP
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SI3443DDV-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 1,876
Can ship immediately
Pricing:
- 1$0.45
- 3,000$0.1036
- 6,000$0.09785
- 15,000$0.08922
- 30,000$0.08346
- 75,000$0.07483
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Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):20 V
- Current - Continuous Drain (Id) @ 25°C:4A (Ta), 5.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:47mOhm @ 4.5A, 4.5V
- Vgs(th) (Max) @ Id:1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:30 nC @ 8 V
- Vgs (Max):±12V
- Input Capacitance (Ciss) (Max) @ Vds:970 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):1.7W (Ta), 2.7W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:6-TSOP
- Package / Case:SOT-23-6 Thin, TSOT-23-6
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