SI2305CDS-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 8V 5.8A SOT23-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SI2305CDS-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 1,615
Can ship immediately
Pricing:
- 1$0.48
- 3,000$0.14987
- 6,000$0.14127
- 15,000$0.13266
- 30,000$0.12233
- 75,000$0.11802
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Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):8 V
- Current - Continuous Drain (Id) @ 25°C:5.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:35mOhm @ 4.4A, 4.5V
- Vgs(th) (Max) @ Id:1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:30 nC @ 8 V
- Vgs (Max):±8V
- Input Capacitance (Ciss) (Max) @ Vds:960 pF @ 4 V
- FET Feature:-
- Power Dissipation (Max):960mW (Ta), 1.7W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:SOT-23-3 (TO-236)
- Package / Case:TO-236-3, SC-59, SOT-23-3
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