RW1A013ZPT2R
ROHM Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 12V 1.5A 6WEMT
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet RW1A013ZPT2R Datasheet
-
ECAD Model
- Share
In Stock: 5,877
Can ship immediately
Pricing:
- 1$0.5
- 8,000$0.12561
- 16,000$0.11751
- 24,000$0.11346
Quote It
Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Not For New Designs
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):12 V
- Current - Continuous Drain (Id) @ 25°C:1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:260mOhm @ 1.3A, 4.5V
- Vgs(th) (Max) @ Id:1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:2.4 nC @ 4.5 V
- Vgs (Max):±10V
- Input Capacitance (Ciss) (Max) @ Vds:290 pF @ 6 V
- FET Feature:-
- Power Dissipation (Max):400mW (Ta)
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:6-WEMT
- Package / Case:SOT-563, SOT-666
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