SSM6J512NU,LF
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 12V 10A 6UDFNB
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SSM6J512NU,LF Datasheet
-
ECAD Model
- Share
In Stock: 1,310
Can ship immediately
Pricing:
- 1$0.5
- 3,000$0.13301
- 6,000$0.12495
- 15,000$0.11689
- 30,000$0.11286
Quote It
Technical Details
- Series:U-MOSVII
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):12 V
- Current - Continuous Drain (Id) @ 25°C:10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):1.8V, 8V
- Rds On (Max) @ Id, Vgs:16.2mOhm @ 4A, 8V
- Vgs(th) (Max) @ Id:1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:19.5 nC @ 4.5 V
- Vgs (Max):±10V
- Input Capacitance (Ciss) (Max) @ Vds:1400 pF @ 6 V
- FET Feature:-
- Power Dissipation (Max):1.25W (Ta)
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:6-UDFNB (2x2)
- Package / Case:6-WDFN Exposed Pad
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