STD1HN60K3
STMicroelectronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 600V 1.2A DPAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet STD1HN60K3 Datasheet
-
ECAD Model
- Share
In Stock: 2,683
Can ship immediately
Pricing:
- 1$0.51975
- 2,500$0.51381
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Technical Details
- Series:SuperMESH3™
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:1.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:8Ohm @ 600mA, 10V
- Vgs(th) (Max) @ Id:4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs:9.5 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:140 pF @ 50 V
- FET Feature:-
- Power Dissipation (Max):27W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:DPAK
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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