SI3473DDV-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CHANNEL 12V 8A 6TSOP
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SI3473DDV-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 3,077
Can ship immediately
Pricing:
- 1$0.53
- 3,000$0.16578
- 6,000$0.15626
- 15,000$0.14673
- 30,000$0.13531
- 75,000$0.13055
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Technical Details
- Series:TrenchFET® Gen III
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):12 V
- Current - Continuous Drain (Id) @ 25°C:8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:17.8mOhm @ 8.7A, 4.5V
- Vgs(th) (Max) @ Id:1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:57 nC @ 8 V
- Vgs (Max):±8V
- Input Capacitance (Ciss) (Max) @ Vds:1975 pF @ 6 V
- FET Feature:-
- Power Dissipation (Max):3.6W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:6-TSOP
- Package / Case:SOT-23-6 Thin, TSOT-23-6
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