SI1070X-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 30V 1.2A SC89-6
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SI1070X-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 1,293
Can ship immediately
Pricing:
- 1$0.53
- 3,000$0.1949
- 6,000$0.18233
- 15,000$0.16976
- 30,000$0.16095
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Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:1.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:99mOhm @ 1.2A, 4.5V
- Vgs(th) (Max) @ Id:1.55V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:8.3 nC @ 5 V
- Vgs (Max):±12V
- Input Capacitance (Ciss) (Max) @ Vds:385 pF @ 15 V
- FET Feature:-
- Power Dissipation (Max):236mW (Ta)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:SC-89-6
- Package / Case:SOT-563, SOT-666
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