RT1E040RPTR

ROHM Semiconductor
In Stock: 2,083

Can ship immediately

Pricing:
  • 1$0.55
  • 3,000$0.14657
  • 6,000$0.13769
  • 15,000$0.1288
  • 30,000$0.12436

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Technical Details

  • Series:-
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Not For New Designs
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4V, 10V
  • Rds On (Max) @ Id, Vgs:45mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA

 

  • Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):550mW (Ta)
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-TSST
  • Package / Case:8-SMD, Flat Lead

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