FQT4N20LTF
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 200V 850MA SOT223-4
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet FQT4N20LTF Datasheet
-
ECAD Model
- Share
In Stock: 1,946
Can ship immediately
Pricing:
- 1$0.58
- 4,000$0.24369
- 8,000$0.22797
- 12,000$0.21225
- 28,000$0.20124
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Technical Details
- Series:QFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):200 V
- Current - Continuous Drain (Id) @ 25°C:850mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On):5V, 10V
- Rds On (Max) @ Id, Vgs:1.35Ohm @ 425mA, 10V
- Vgs(th) (Max) @ Id:2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:5.2 nC @ 5 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:310 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):2.2W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:SOT-223-4
- Package / Case:TO-261-4, TO-261AA
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