RF4E110BNTR
ROHM Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 30V 11A HUML2020L8
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet RF4E110BNTR Datasheet
-
ECAD Model
- Share
In Stock: 2,694
Can ship immediately
Pricing:
- 1$0.62
- 3,000$0.22505
- 6,000$0.21729
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:11.1mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id:2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 15 V
- FET Feature:-
- Power Dissipation (Max):2W (Ta)
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:HUML2020L8
- Package / Case:8-PowerUDFN
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