CSD25211W1015
Texas Instruments
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 20V 3.2A 6DSBGA
- CategoryTransistors - FETs, MOSFETs - Single
-
ECAD Model
- Share
In Stock: 1,458
Can ship immediately
Pricing:
- 1$0.66
- 3,000$0.19486
- 6,000$0.18229
- 15,000$0.176
Quote It
Technical Details
- Series:NexFET™
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):20 V
- Current - Continuous Drain (Id) @ 25°C:3.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:33mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id:1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:4.1 nC @ 4.5 V
- Vgs (Max):-6V
- Input Capacitance (Ciss) (Max) @ Vds:570 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):1W (Ta)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:6-DSBGA (1x1.5)
- Package / Case:6-UFBGA, DSBGA
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