SIS435DNT-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 20V 30A PPAK1212-8
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SIS435DNT-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 3,076
Can ship immediately
Pricing:
- 1$0.82
- 3,000$0.34747
- 6,000$0.32492
- 15,000$0.31365
- 30,000$0.3075
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Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):20 V
- Current - Continuous Drain (Id) @ 25°C:30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:5.4mOhm @ 13A, 4.5V
- Vgs(th) (Max) @ Id:900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:180 nC @ 8 V
- Vgs (Max):±8V
- Input Capacitance (Ciss) (Max) @ Vds:5700 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):3.7W (Ta), 39W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PowerPAK® 1212-8
- Package / Case:PowerPAK® 1212-8
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