SISS23DN-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 20V 50A PPAK 1212-8S
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SISS23DN-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 2,781
Can ship immediately
Pricing:
- 1$0.9
- 3,000$0.3707
- 6,000$0.34664
- 15,000$0.33461
- 30,000$0.32805
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Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):20 V
- Current - Continuous Drain (Id) @ 25°C:50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:4.5mOhm @ 20A, 4.5V
- Vgs(th) (Max) @ Id:900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:300 nC @ 10 V
- Vgs (Max):±8V
- Input Capacitance (Ciss) (Max) @ Vds:8840 pF @ 15 V
- FET Feature:-
- Power Dissipation (Max):4.8W (Ta), 57W (Tc)
- Operating Temperature:-50°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PowerPAK® 1212-8S (3.3x3.3)
- Package / Case:PowerPAK® 1212-8S
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