FQD10N20LTM
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 200V 7.6A TO252
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet FQD10N20LTM Datasheet
-
ECAD Model
- Share
In Stock: 114
Can ship immediately
Pricing:
- 1$0.95
- 2,500$0.45706
- 5,000$0.43548
- 12,500$0.42005
- 25,000$0.4178
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Technical Details
- Series:QFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):200 V
- Current - Continuous Drain (Id) @ 25°C:7.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):5V, 10V
- Rds On (Max) @ Id, Vgs:360mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id:2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:17 nC @ 5 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:830 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):2.5W (Ta), 51W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:TO-252, (D-Pak)
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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