SISS27ADN-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 30V 50A PPAK1212-8S
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SISS27ADN-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 3,029
Can ship immediately
Pricing:
- 1$0.99
- 3,000$0.40511
- 6,000$0.37882
- 15,000$0.36567
Quote It
Technical Details
- Series:TrenchFET® Gen III
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:5.1mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:55 nC @ 4.5 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:4660 pF @ 15 V
- FET Feature:-
- Power Dissipation (Max):57W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PowerPAK® 1212-8S (3.3x3.3)
- Package / Case:PowerPAK® 1212-8S
Related Products
MOSFET P-CH 60V 2A TSMT6
- 1: $0.99000
- 3000: $0.38080
MOSFET N-CH 30V 24A/123A 8VSON
- 1: $0.99000
- 250: $0.60753
- 500: $0.53687
