STU1HN60K3
STMicroelectronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 600V 1.2A IPAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet STU1HN60K3 Datasheet
-
ECAD Model
- Share
In Stock: 116
Can ship immediately
Pricing:
- 1$1.08
- 75$0.87408
- 150$0.77112
- 525$0.60944
- 1,050$0.49183
- 2,550$0.46243
- 5,025$0.44185
Quote It
Technical Details
- Series:SuperMESH3™
- Package:Tube
- Part Status:Not For New Designs
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:1.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:8Ohm @ 600mA, 10V
- Vgs(th) (Max) @ Id:4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs:9.5 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:140 pF @ 50 V
- FET Feature:-
- Power Dissipation (Max):27W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:I-PAK
- Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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