NTTFS6H850NLTAG

Technical Details

• Series:-
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):80 V
• Current - Continuous Drain (Id) @ 25°C:14.8A (Ta), 64A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:8.6mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id:2V @ 70µA

• Gate Charge (Qg) (Max) @ Vgs:26 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:1450 pF @ 40 V
• FET Feature:-
• Power Dissipation (Max):3.9W (Ta), 73W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:8-WDFN (3.3x3.3)
• Package / Case:8-PowerWDFN