STU9HN65M2
STMicroelectronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 650V 5.5A IPAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet STU9HN65M2 Datasheet
-
ECAD Model
- Share
In Stock: 123
Can ship immediately
Pricing:
- 1$1.22
- 75$0.98998
- 150$0.8734
- 525$0.69026
- 1,050$0.55704
- 2,550$0.52374
- 5,025$0.50043
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Technical Details
- Series:MDmesh™ M2
- Package:Tube
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):650 V
- Current - Continuous Drain (Id) @ 25°C:5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:820mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:11.5 nC @ 10 V
- Vgs (Max):±25V
- Input Capacitance (Ciss) (Max) @ Vds:325 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):60W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:I-PAK
- Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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