STI55NF03L

Technical Details

• Series:STripFET™ II
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:55A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:13mOhm @ 27.5A, 10V
• Vgs(th) (Max) @ Id:2.5V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:27 nC @ 4.5 V
• Vgs (Max):±16V
• Input Capacitance (Ciss) (Max) @ Vds:1265 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):80W (Tc)
• Operating Temperature:-60°C ~ 175°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:I2PAK
• Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA