SIS606BDN-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 100V 9.4A/35.3A PPAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SIS606BDN-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 1,799
Can ship immediately
Pricing:
- 1$1.56
- 3,000$0.73341
- 6,000$0.69897
- 15,000$0.67438
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Technical Details
- Series:TrenchFET® Gen IV
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:9.4A (Ta), 35.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
- Rds On (Max) @ Id, Vgs:17.4mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1470 pF @ 50 V
- FET Feature:-
- Power Dissipation (Max):3.7W (Ta), 52W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PowerPAK® 1212-8
- Package / Case:PowerPAK® 1212-8
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