TK6A60D(STA4,Q,M)
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 600V 6A TO220SIS
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TK6A60D(STA4,Q,M) Datasheet
-
ECAD Model
- Share
In Stock: 1,955
Can ship immediately
Pricing:
- 1$1.72
- 10$1.52624
- 100$1.20587
- 500$0.93512
- 1,000$0.73825
- 2,500$0.68904
Quote It
Technical Details
- Series:π-MOSVII
- Package:Tube
- Part Status:Last Time Buy
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:1.25Ohm @ 3A, 10V
- Vgs(th) (Max) @ Id:4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:16 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:800 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):40W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220SIS
- Package / Case:TO-220-3 Full Pack
